Simulation based Investigations on Efficiency, Short Circuit Current and Open Circuit Voltage of CIGS Solar Cell using Taguchi Method, Clustering and ANFIS
In this paper Taguchi method with simulation is utilized for the investigation of control factors (thicknesses and
concentrations of ZnO, Cds and CIGS layers) using Silvaco TCAD software for 500 μ𝑚2 and 1500 μm × 1500 μm CIGS
solar cell. Effect of these control parameters on solar cell efficiency, short circuit current and open circuit voltage is
investigated. L25 orthogonal array of 6 factors and 5 levels is considered. The experimental design points are plotted and
clustered to identify the key control factors at the design space clusters. Finally an ANFIS is also trained using simulation
experimental design points for the efficiency, short circuit current and open circuit voltage modeling of the CIGS structure.
The ANFIS predicted results shows for short circuit current, efficiency and open circuit voltage minimum relative error
observed for Gaussian membership function 0.0356, 0.0441 and 0.0655 respectively in the case of 500 μm2CIGSsolarcell.
For 1500 μm × 1500 μm CIGS solar cellshort circuit current minimum relative error observed for Gaussian membership
function 0.089. Minimum relative error is obtained for efficiency and open circuit voltage using triangular membership
function is 0.032 and 0.0583 respectively.
Keywords - Taguchi Method, CIGS Solar Cell, Clustering, ANFIS.